Graphene nanomeshes: Onset of conduction band gaps

0009-2614/$ see front matter 2010 Elsevier B.V. A doi:10.1016/j.cplett.2010.08.086 ⇑ Corresponding author. Fax: + 1 310 267 0319. E-mail address: [email protected] (D. Neuhause Hückel simulations of large finite graphene nanomeshes with lithographically induced holes show sizable band gaps in the conduction while the optical absorption has generally the same semi-metal character as pure graphene. There is a strong dependence of the band gap on the angle between the graphene axis and the periodic hole axis. Simple modification of on-site energies shows that substituents on the edges of the holes could also have a significant effect. These simulations show that graphene nanomeshes, which have been recently fabricated, are potentially useful tunable materials for electronic applications. 2010 Elsevier B.V. All rights reserved.